Depth Profile

The most often type of a SIMS analysis is the depth profile The following figure shows an implantation profile of phosporus in silicium that has been measured with a high sensitivity over a wide dynamic range. Depth profiles can be realized very effectiv with sims (figure: © CAMECA).

Lateral element distribution

The picture on the left shows the distribution of the 18 oxygenium isotope in NiO over 150µm diameter. The integration time of ¹⁸O was one second. ( © CAMECA).

Mass spectrum

Mass spectra are obtained by measuring the intensities while continuously changing the detected mass. In the mass spectrum if the figure (NBS Steel Standard 449) are shown elements with concentrations markedly below 1 weight percent, such as Si, V, Cu, Nb, Mo, Ta und W can be clearly identified. Using element distributions (maps) it is possible to identify local inhomogenities. The determing of isotopic abundance facilitates element identification or is used in tracer analyses.